Semiconductor devices including gates and dummy gates of different materials
US9209177B2 · kind B2 · utility
9Cited by
9References
17Claims
0Family size
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Key dates
| Filing date | Mar 4, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Semiconductor devices are provided. The semiconductor devices may include an active pattern and a insulation layer. The semiconductor devices may include a gate that is on the active pattern and that includes a first material, and a dummy gate that is on the insulation layer and that includes a second material different from the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.