High-integration semiconductor device and method for fabricating the same
US9209184B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Apr 10, 2015 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.