Method and structure for FinFET device
US9209185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for fabricating a fin-like field-effect transistor (FinFET). The method includes forming a first fin structures over a substrate, forming a patterned oxidation-hard-mask (OHM) over the substrate to expose the first fin structure in a first gate region of a n-type FET region, forming a semiconductor oxide feature in a middle portion of the first fin structure in the first gate region, forming a second fin structure in a PFET region, forming dummy gates, forming source/drain (S/D) features, replacing the dummy gates by a first high-k/metal gate (HK/MG) in the NFET region and a second HK/MG in the PFET region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.