Method of forming a shallow trench isolation structure
US9209243B2 · kind B2 · utility
3Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2015 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Feb 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.