Patent · US Active

Reduced scale resonant tunneling field effect transistor

US9209288B2 · kind B2 · utility

9Cited by

1References

14Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Uygar E. Avci · Portland, US
Dmitri E. Nikonov · معلمی نژاد, US
Ian A. Young · Portland, US

Key dates

Filing date	Dec 21, 2012
Grant date	Dec 8, 2015
Priority date	—
Expiry date	Apr 25, 2033

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y10/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.