N/P MOS FinFET performance enhancement by specific orientation surface
US9209304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Feb 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.