Inventor · Tainan, TW

Wei-Barn Chen

11Patents

2h-index

12Co-inventors

43Inventor score

Filing activity: Feb 13, 2014 → May 9, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9209304B2	N/P MOS FinFET performance enhancement by specific orientation surface	Electricity	3	Active
US11309423B2	Fin field effect transistor (finFET) device structure and method for forming the same	Electricity	2	Active
US10276720B2	Method for forming fin field effect transistor (FINFET) device structure	Electricity	2	Active
US10957695B2	Asymmetric gate pitch	Electricity	0	Active
US10483167B2	Method for manufacturing dual FinFET device	Electricity	0	Active
US11949014B2	Fin field effect transistor (FinFet) device structure and method for forming the same	Electricity	0	Active
US10475790B2	Asymmetric gate pitch	Electricity	0	Active
US9859129B2	Semiconductor device and manufacturing method of the same	Electricity	0	Active
US11328958B2	Semiconductor device having planar transistor and FinFET	Electricity	0	Active
US10818555B2	Semiconductor device having planar transistor and FinFET	Electricity	0	Active
US12009262B2	Semiconductor device having planar transistor and FinFET	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.