Method of fabricating a single photon avalanche diode imaging sensor
US9209320B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method of fabricating an avalanche photodiode pixel includes growing a second doped semiconductor layer on a first doped semiconductor layer having a first doping concentration. The second doped semiconductor layer is grown with a second doping concentration and is of an opposite majority charge carrier type as the first doped semiconductor layer. A doped contact region having a third doping concentration is formed in the second doped semiconductor layer between the doped contact region and the first doped semiconductor layer. The doped contact region is of a same majority charge carrier type as the second doped semiconductor layer. The third doping concentration is greater than the second doping concentration. A guard ring region is formed in the second doped semiconductor layer, is of an opposite majority charge carrier type as the second doped semiconductor layer, and extends through the second doped semiconductor layer surrounding the doped contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.