Method for forming doping region and method for forming MOS
US9209344B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2012 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jun 18, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.