Magneto-resistive element having a ferromagnetic layer containing boron
US9209386B2 · kind B2 · utility
8Cited by
1References
4Claims
0Family size
Inventors
Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magneto-resistive element includes a first ferromagnetic layer formed on a substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer, the second magnetic layer containing therein any of He, Ne, Ar, Kr, Xe and N2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.