Physically unclonable function based on the random logical state of magnetoresistive random-access memory
US9214214B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Apr 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L9/3278
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.