High efficiency plasma source
US9214319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2012 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4652
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.