Molecular radical etch chemistry for increased throughput in pulsed plasma applications
US9214355B2 · kind B2 · utility
2Cited by
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14Claims
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Key dates
| Filing date | Oct 22, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As device feature size shrinks, plasma induced damage is a major concern affecting micro-electronic and nano-electronic device fabrication. Pulsed plasmas are a means of mitigating the damages. However, in conventional standard etch chemistry, the etch rate for pulsed plasmas is reduced significantly resulting in a substantially decreased throughput of tech processes. A new etch chemistry is disclosed in the present invention to increase throughput in pulsed plasma applications driven mainly by the molecular radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.