Substrate treating apparatus and method
US9214357B1 · kind B1 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Aug 21, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention disclosed herein relates to a substrate treating apparatus and method. The substrate treating method includes: providing a substrate on which an oxide layer is formed; treating the oxide layer with a first process gas in a plasma state to substitute the treated oxide layer with a by-product layer; and heating the substrate to remove the by-product layer at a temperature which is above a first heating temperature at which the by-product layer is decomposed and is above a second heating temperature that is a boiling point of an additive by-product generated while the by-product layer is decomposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.