Highly coupled spiral planar inductors structure at bump to compensate on die excess capacitance of differential I/O
US9214426B1 · kind B1 · utility
1Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Jul 11, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for reducing excess on die capacitance. The method couples a first die pad to a first via. The method couples a second die pad to a second via. The method couples a first inductor to the first die pad and the second via. The method couples a second inductor to the second die pad and the first via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.