Field effect silicon carbide transistor
US9214516B2 · kind B2 · utility
5Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | May 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.