Method for fabricating semiconductor device, and semiconductor device made thereby
US9214551B2 · kind B2 · utility
1Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Feb 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.