Oxide semiconductor film and semiconductor device
US9214563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.