Electrical contact structure with a redistribution layer connected to a stud
US9214579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Nov 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor structure includes the following steps. A wafer structure having a silicon substrate and a protection layer is provided. An electrical pad on the protection layer is exposed through the concave region of the silicon substrate. An isolation layer is formed on the sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer. A redistribution layer is formed on the isolation layer and the electrical pad. A passivation layer is formed on the redistribution layer. The passivation layer is patterned to form a first opening therein. A first conductive layer is formed on the redistribution layer exposed through the first opening. A conductive structure is arranged in the first opening, such that the conductive structure is in electrical contact with the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.