Annealing for damage free laser processing for high efficiency solar cells
US9214585B2 · kind B2 · utility
2Cited by
1References
9Claims
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Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.