Substrate processing apparatus
US9217199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.