Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
US9218959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Mar 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02263
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and supplying an amine-based gas to the substrate in the process container; and (b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.