Method of fabricating polymer film in the cavity of a wafer

US9219004B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Hubert Moriceau · Saint-Égrève, FR
• Maxime Argoud · Grenoble, FR
• Christophe Morales · Le Pont-de-Claix, FR
• Marc Zussy · Grenoble, FR

Key dates

• Filing date: Aug 24, 2011
• Grant date: Dec 22, 2015
• Expiry date: Jun 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6835
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.