Semiconductor system and device
US9219005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2012 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.