Flowable carbon film by FCVD hardware using remote plasma PECVD
US9219006B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 2014 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Mar 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.