Multi-threshold voltage devices and associated techniques and configurations
US9219155B2 · kind B2 · utility
8Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Feb 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.