Pellicle for lithography, pellicle-mounted photomask, and exposure treatment method
US9223200B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/62
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a pellicle for lithography having a pellicle membrane excellent in light resistance against light with a wavelength of at most 250 nm, particularly at most 200 nm, a pellicle-mounted photomask using it, and an exposure treatment method. A pellicle for lithography having a multilayer pellicle membrane including a membrane made of a fluoropolymer (A) which contains, as the main component, repeating units obtained by cyclopolymerization of a pertluorodiene having one etheric oxygen atom, and a membrane made of a fluoropolymer (B) which has fluorinated alicyclic ring structures each containing, in the ring structure, two or three etheric oxygen atoms not being adjacent to one another, wherein the total thickness of the membrane made of the fluoropolymer (B) is at most 40% of the total thickness of the membrane made of the fluoropolymer (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.