Method for correcting electronic proximity effects using the deconvolution of the pattern to be exposed by means of a probabilistic method
US9223926B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of lithography by radiation having critical dimensions of the order of some ten nanometers makes it possible to carry out the correction of the proximity effects by joint optimization of the dose modulation and geometric corrections. Accordingly, a deconvolution of the pattern to be etched is carried out by an iterative procedure modeling the interactions of the radiation with the resined support by a joint probability distribution. Advantageously, when the support exposure tool is of formed-beam type, the pattern to be etched is split into contrasted levels and then the deconvolved image is vectorized and fractured before carrying out the exposure step. In an advantageous embodiment, the method is applied to at least two character cells which are exposed in a multi-pass cells projection method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.