Nonvolatile memory device and read method thereof
US9224493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | May 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.