Surface preparation with remote plasma
US9224594B2 · kind B2 · utility
6Cited by
14References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.