Patent · US Active

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

US9224633B2 · kind B2 · utility

0Cited by

8References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rudolf Berger · Munich, DE
Hermann Gruber · Leverkusen, DE
Wolfgang Lehnert · Lintach, DE
Guenther Ruhl · Regensburg, DE
Raimund Foerg · Straubing, DE
Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE
Karsten Kellermann · Altdorf, DE
Michael Sommer · Raubling, DE
Christian Rottmair · Erlangen, DE
Roland Rupp · Achern, DE

Key dates

Filing date	Jul 24, 2014
Grant date	Dec 29, 2015
Priority date	—
Expiry date	Jul 24, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.