Automatic capacitance tuning for robust middle of the line contact and silicide applications
US9224675B1 · kind B1 · utility
11Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first metal liner conformally along a sidewall and a bottom of a contact opening. A second metal liner is formed above and in direct contact with the first metal liner, a grain size of the first metal liner is larger than a grain size of the second metal liner. A barrier layer is formed above and in direct contact with the second metal liner and the contact opening is filled with a conductive material to form a middle-of-the-line contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.