Nonvolatile memory device and method for manufacturing same
US9224788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0071
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to an embodiment, a nonvolatile memory device includes a first wiring extending to a first direction, a second wiring disposed on the first wiring in a second direction which is orthogonal to the first direction, a first insulating film provided between the first wiring and the second wiring, a bit line extending in the second direction, and a variable resistance film contacting an end portion of the first wiring, an end portion of the second wiring, and an end portion of the first insulating film. A dielectric constant of a center portion between the first and second wirings in the second direction is higher than at vicinities of the first and the second wirings. The variable resistance film is disposed between the bit line and the first wiring, between the bit line and the second wiring, and between the bit line and the first insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.