Hiroyuki Ode
70Patents
5h-index
33Co-inventors
68Inventor score
Filing activity: Nov 16, 2006 → Sep 1, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8581318B1 | Enhanced non-noble electrode layers for DRAM capacitor cell | Electricity | 11 | Active |
| US9105646B2 | Methods for reproducible flash layer deposition | Electricity | 10 | Active |
| US8647960B2 | Anneal to minimize leakage current in DRAM capacitor | Electricity | 10 | Active |
| US8349696B1 | Asymmetric MIM capacitor for DRAM devices | Electricity | 6 | Active |
| US8765570B2 | Manufacturable high-k DRAM MIM capacitor structure | Electricity | 5 | Active |
| US8722504B2 | Interfacial layer for DRAM capacitor | Electricity | 5 | Active |
| US8574998B2 | Leakage reduction in DRAM MIM capacitors | Electricity | 5 | Active |
| US9012298B2 | Methods for reproducible flash layer deposition | Electricity | 4 | Active |
| US8815677B2 | Method of processing MIM capacitors to reduce leakage current | Electricity | 4 | Active |
| US8828836B2 | Method for fabricating a DRAM capacitor | Electricity | 4 | Active |
| US8415227B2 | High performance dielectric stack for DRAM capacitor | Electricity | 4 | Active |
| US8652927B2 | Integration of non-noble DRAM electrode | Electricity | 4 | Active |
| US8435854B1 | Top electrode templating for DRAM capacitor | Electricity | 4 | Active |
| US8530348B1 | Integration of non-noble DRAM electrode | Electricity | 4 | Active |
| US8476141B2 | High performance dielectric stack for DRAM capacitor | Electricity | 3 | Active |
| US8815695B2 | Methods to improve leakage for ZrO2 based high K MIM capacitor | Electricity | 3 | Active |
| US8813325B2 | Method for fabricating a DRAM capacitor | Emerging Cross-Sectional Technologies | 3 | Active |
| US8647943B2 | Enhanced non-noble electrode layers for DRAM capacitor cell | Electricity | 3 | Active |
| US8546236B2 | High performance dielectric stack for DRAM capacitor | Electricity | 3 | Active |
| US8835273B2 | High temperature ALD process of metal oxide for DRAM applications | Electricity | 3 | Active |
| US8486780B2 | Doped electrode for dram applications | Electricity | 3 | Active |
| US8581319B2 | Semiconductor stacks including catalytic layers | Electricity | 3 | Active |
| US8541868B2 | Top electrode templating for DRAM capacitor | Electricity | 3 | Active |
| US9721961B2 | Semiconductor memory device | Electricity | 3 | Active |
| US9224788B2 | Nonvolatile memory device and method for manufacturing same | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.