Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device
US9224796B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled to the interconnect. A through-silicon via passes through the substrate having at one end a first contact face electrically coupled to a second electrically conductive zone placed on said second side of the substrate and at the other end a part electrically coupled to the interconnect part. The two first contact faces are located in the same plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.