Patent · US Active

Uniaxially strained nanowire structure

US9224808B2 · kind B2 · utility

13Cited by

3References

43Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Stephen M. Cea · Hillsboro, US
Seiyon Kim · Portland, US
Annalisa Cappellani · Portland, US

Key dates

Filing date	Dec 23, 2011
Grant date	Dec 29, 2015
Priority date	—
Expiry date	Sep 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.