Transistor and method of fabricating the same
US9224830B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 11, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Aug 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a ‘+’-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.