Semiconductor structure and method for manufacturing the same
US9224857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2012 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Nov 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.