Memories with cylindrical read/write stacks
US9227456B2 · kind B2 · utility
181Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional memory is formed as an array of memory elements across multiple layers positioned at different distances above a semiconductor substrate. Cylindrical stacks of memory elements are formed where a cylindrical opening has read/write material deposited along its wall, and a cylindrical vertical bit line formed along its central axis. Memory elements formed on either side of such a cylinder may include sheet electrodes that extend into the read/write material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.