Wafer processing chamber, heat treatment apparatus and method for processing wafers
US9228260B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jul 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing chamber is provided, including a first processing gas supply unit and a second processing gas supply unit. The first processing gas supply unit is configured for supplying a first processing gas to form a first processing zone in the wafer processing chamber. The second processing gas supply unit is configured for supplying a second processing gas into the wafer processing chamber to form a second processing zone in the wafer processing chamber. In the wafer processing chamber, the first processing zone and the second processing zone are virtually separated from each other, such that a process wafer in the first processing zone may be performed a different process from another process wafer in the second processing zone at the same time. Further, a heat treatment apparatus and a method for processing wafers also provide herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.