Physically unclonable function based on the initial logical state of magnetoresistive random-access memory
US9230630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L9/3278
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.