PLZT capacitor on glass substrate
US9230739B2 · kind B2 · utility
2Cited by
9References
3Claims
0Family size
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Key dates
| Filing date | Oct 29, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.