Ion beam uniformity control
US9230773B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma chamber having improved controllability of the ion density of the extracted ribbon ion beam is disclosed. A plurality of pairs of RF biased electrodes is disposed on opposite sides of the extraction aperture in a plasma chamber. In some embodiments, one of each pair of RF biased electrodes is biased at the extraction voltage, while the other of each pair is coupled to a RF bias power supply, which provides a RF voltage having a DC component and an AC component. In another embodiment, both of the electrodes in each pair are coupled to a RF biased power supply. A blocker may be disposed in the plasma chamber near the extraction aperture. In some embodiments, RF biased electrodes are disposed on the blocker.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.