Patent · US Active

Semiconductor wafer composed of silicon and method for producing same

US9230798B2 · kind B2 · utility

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20Claims

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Assignee

Siltronic AG · DE

Inventors

Timo Mueller · Burghausen, DE
Michael Gehmlich · Bad Birnbach, DE
Frank Faller · Vilshofen an der Donau, DE
Dirk Waehlisch · Meißen, DE

Key dates

Filing date	May 5, 2015
Grant date	Jan 5, 2016
Priority date	—
Expiry date	May 5, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Monocrystalline silicon semiconductor wafers have a front side and a rear side, and a denuded zone which extends from the front side to the rear side as far as a depth which between a center and an edge of the semiconductor wafer on average is not less than 8 μm and not more than 18 μm, and having a region adjoining the denuded zone having BMDs whose density at a distance of 30 μm from the front side is not less than 2×109 cm−3. The semiconductor wafers are produced by a method comprising providing a substrate wafer of monocrystalline silicon and an RTA treating the substrate wafer, the treatment subdivided into a first thermal treatment of the substrate wafer in an atmosphere consisting of argon and into a second thermal treatment of the substrate wafer in an atmosphere consisting of argon and ammonia.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.