Interconnect structure and method of forming the same
US9230911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a low-k (LK) dielectric layer over a substrate; a first conductive feature and a second conductive feature in the LK dielectric layer; a first spacer along a first sidewall of the first conductive feature; a second spacer along a second sidewall of the second conductive feature, wherein the second sidewall of the second conductive feature faces the first sidewall of the first conductive feature; an air gap between the first spacer and the second spacer; and a third conductive feature over the first conductive feature, wherein the third conductive feature is connected to the first conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.