Semiconductor device and a manufacturing method thereof
US9230937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2012 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Dec 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.