High electron mobility transistor and method of manufacturing the same
US9231093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.