Convex shaped thin-film transistor device having elongated channel over insulating layer
US9231112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines and in a groove in the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.