Semiconductor memory device and method for manufacturing the same
US9231192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Mar 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a memory device with magnetroresistive effect element is disclosed. The element includes first metal magnetic film (MMF) with nonmagnetic element and axis of easy magnetization perpendicular (EMP), first insulating film, first intermediate magnetic film between the first MMF and the first insulating film, second MMF on the first insulating film and including nonmagnetic elements, the second MMF having axis of EMP, second intermediate magnetic film between the first insulating film and the second MMF, and diffusion preventing film including metal nitride having barrier property against diffusion of the nonmagnetic elements between the first MMF and the first intermediate magnetic film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.