Capacitive micro-machined transducer and method of manufacturing the same
US9231496B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jan 18, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0127
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.